| PART |
Description |
Maker |
| SBR3U60P1 SBR3U60P1-7 SBR3U60P1-13 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers
Patented Interlocking Clip Design for High Surge Current Capacity
|
Diodes Incorporated
|
| SI9167 AN727 |
High-Frequency / High-Efficiency Buck Converter Design For Multi-Cell Battery Configured Systems
High-Frequency, High-Efficiency Buck Converter Design For Multi-Cell Battery Configured Systems Using Si9167
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PCH1J390MCL1GS |
Chip Type, Higher Capacitance High Temperature Range
|
Nichicon corporation
|
| ST49C101A ST49C101ACF8-01 ST49C101ACF8-03 ST49C101 |
High Frequency Clock Multiplier 80 MHz, OTHER CLOCK GENERATOR, PDSO8
High Frequency Clock Multiplier(高频时钟乘法器（掩摸可编程单片模拟锁相环设备
Preprogrammed High Speed Frequency Multiplier
|
Exar, Corp.
EXAR[Exar Corporation]
|
| BB833 Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz special design for use in TV-SAT indoor units)
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units)
|
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BB837 Q62702-B0904 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| BUL54BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL52B BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
